Material and electrical properties of highly mismatched InxGa1-xAs on GaAs by molecular-beam epitaxy.

Presents a study that investigated the material properties of In[subx]Ga[sub1-x]As epilayers on gallium arsenide by molecular-beam epitaxy. Interpretation of the cross-sectional transmission electron microscopy images for the heterojunctions; Relation used to estimate the upper limit of threading dislocation density in terms of the full width at half-maximum of the (400) double-crystal x-ray diffraction signal; Analysis of the magnetophotoconductivity signals.