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Elimination of thermally induced biaxial stress in GaAs on Si layers by post-growth patterning.

Authors :
van der Ziel, J. P.
Chand, Naresh
Weiner, J. S.
Source :
Journal of Applied Physics. 8/1/1989, Vol. 66 Issue 3, p1195. 4p. 1 Black and White Photograph, 3 Graphs.
Publication Year :
1989

Abstract

Presents a study which reduced the biaxial tensile stress by post-growth patterning of the gallium arsenide. Experimental details; Stress exhibited by stripe and rectangular patterns; Conclusion.

Subjects

Subjects :
*STRAINS & stresses (Mechanics)
*GALLIUM arsenide

Details

Language :
English
ISSN :
00218979
Volume :
66
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7641608
Full Text :
https://doi.org/10.1063/1.343462
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