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Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon.

Authors :
Awadelkarim, O. O.
Weman, H.
Svensson, B. G.
Lindström, J. L.
Source :
Journal of Applied Physics. 9/15/1986, Vol. 60 Issue 6, p1974. 6p. 6 Graphs.
Publication Year :
1986

Abstract

Presents a study which examined the isothermal annealing of electron-irradiated Czochralski silicon samples using deep-level transient spectroscopy and photoluminescence. Background on Czochralski silicon; Experimental setup; Results and conclusions.

Subjects

Subjects :
*MATERIALS at high temperatures
*SILICON
*DEEP level transient spectroscopy
*PHOTOLUMINESCENCE

Details

Language :
English
ISSN :
00218979
Volume :
60
Issue :
6
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7638068
Full Text :
https://doi.org/10.1063/1.337198
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