Effects of in situ plasma supply in undoped and boron-doped polycrystalline silicon by low-pressure chemical vapor deposition at 500–840 °C.

Presents information on a study which discussed changes of the structural and electrical properties brought about by an in situ plasma supply during growth of undoped and boron doped low-pressure chemical vapor deposition poly-silicon film and plasma-enhanced chemical vapor deposition films. Structural property; Effects of plasma supply on improvement of the surface roughness; Electrical property.