Conduction in illuminated GaAs/AlxGa1-xAs heterostructures. I. Experiment.

Authors :: Hurd, C. M.
McAlister, S. P.
McKinnon, W. R.
Falt, C. E.
Day, D. J.
Miner, C. J.
SpringThorpe, A. J.
Source :: Journal of Applied Physics. 3/15/1987, Vol. 61 Issue 6, p2244. 6p. 2 Charts, 6 Graphs.
Publication Year :: 1987
Abstract: Part I. Presents a study which measured the Hall carrier concentration n[sub H] and the Hall mobility μ [sub H] (T) for some n-type, silicon-doped gallium arsenic/aluminum [sub x] gallium [sub 1-x] arsenic heterostructures for different levels of continuous illumination by a red light emitting diode. Experimental details; Results and discussion; Field dependence.