Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor.

Presents a study which investigated the uniformity of epitaxial growth of gallium arsenide by metalorganic chemical vapor deposition in a vertical-flow rotating-disk reactor. Observations on the thickness of the epitaxial layer versus radial distance on the susceptor surface; Model proposed in consideration of hydrodynamic and thermal boundary layer effects at the susceptor surface; Description of the effects of a parasitic process in the limit of smaller boundary layers and transition.