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Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs.

Authors :
Enríquez, L.
Dueñas, S.
Barbolla, J.
Izpura, I.
Muñoz, E.
Source :
Journal of Applied Physics. 7/15/1992, Vol. 72 Issue 2, p525. 6p. 6 Graphs.
Publication Year :
1992

Abstract

Presents a study which investigated selenium-related DX centers in AlGaAs alloys using deep-level transient spectroscopy (DLTS) and constant-capacitance DLTS. Sample preparation; Experimental results and discussion; Conclusions.

Subjects

Subjects :
*SELENIUM
*ALLOYS
*DEEP level transient spectroscopy

Details

Language :
English
ISSN :
00218979
Volume :
72
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7632285

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