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Low-temperature homoepitaxial film growth of Si by reactive ion beam deposition.
- Source :
-
Journal of Applied Physics . 7/15/1988, Vol. 64 Issue 2, p702. 6p. 2 Black and White Photographs, 1 Diagram, 3 Graphs. - Publication Year :
- 1988
-
Abstract
- Discusses a study which investigated the homoepitaxial film growth maintaining primary surface structures of silicon substrates using the reactive ion beam deposition method. Evaluation of impurity concentrations in the epitaxial films; Experimental procedures; Results and discussion; Conclusions.
- Subjects :
- *THIN films
*SILICON
*EPITAXY
*ION bombardment
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7631863
- Full Text :
- https://doi.org/10.1063/1.341964