Transient electroluminescence behavior and mechanism of a Schottky-type porous silicon diode.

Authors :: Wang, Jian
Zhang, Fu-Long
Wang, Wen-Cheng
Zheng, Jia-Biao
Hou, Xiao-Yuan
Wang, Xun
Source :: Journal of Applied Physics. 1/15/1994, Vol. 75 Issue 2, p1070. 4p. 1 Diagram, 6 Graphs.
Publication Year :: 1994
Abstract: Provides information on a study that investigated the transient electroluminescence behavior of a gold/porous silicon/silicon/aluminum diode by a doubly injected voltage pulse method. Details on the experiment; Results and discussion; Conclusion.

Full Text Access

Tools