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Effect of enhanced-mobility current path on the mobility of AOS TFT
- Source :
-
Microelectronics Reliability . Jul2012, Vol. 52 Issue 7, p1346-1349. 4p. - Publication Year :
- 2012
-
Abstract
- Abstract: In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium Gallium Zinc Oxide (a-IGZO) channel layer of a conventional bottom gate structure TFT. To analyze the effect of the length of an additional current path, the a-IGZO channel length was fixed at 80μm, and the length of the ITO enhanced-mobility current path was increased to 20, 40, and 60μm. As a result, the mobility increased monotonically with the length of the enhanced-mobility current path and was predictable from the rule of mixture. The maximum saturation mobility of 28.3cm2/Vs resulted when the length of the enhanced-mobility current path was 60μm. This value is more than double that of a single path TFT. Such enhancement in mobility is attributed to the high conductivity of ITO and a good conduction band match between a-IGZO and ITO. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 52
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 76310589
- Full Text :
- https://doi.org/10.1016/j.microrel.2012.02.012