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Magnetron reactive ion etching of GaAs: Residual damage study.
- Source :
-
Journal of Applied Physics . 1/15/1991, Vol. 69 Issue 2, p695. 3p. 1 Black and White Photograph, 1 Graph. - Publication Year :
- 1991
-
Abstract
- Presents a study which determined the residual damage of gallium arsenide samples etched in a magnetron reactive ion etcher. Indication of the aligned yields from ion channeling measurements; Process of transmission electron microscopy; Capability of magnetron reactive ion etching.
- Subjects :
- *MAGNETRONS
*GALLIUM arsenide
*ION channels
*TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 69
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7630675
- Full Text :
- https://doi.org/10.1063/1.347351