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Surface-energy-driven grain growth during rapid thermal annealing (<10 s) of thin silicon films.
- Source :
-
Journal of Applied Physics . 2/15/1987, Vol. 61 Issue 4, p1652. 4p. 1 Black and White Photograph, 2 Graphs. - Publication Year :
- 1987
-
Abstract
- Examines the initial kinetics of surface-energy-driven grain growth (SEDGG) in silicon that occurred during rapid thermal annealing. Description of the SEDGG; Fraction of the area of a thin film transformed to secondary grains; Definition of extended fraction.
- Subjects :
- *METAL crystal growth
*SURFACE energy
*RAPID thermal processing
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 61
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628694
- Full Text :
- https://doi.org/10.1063/1.338055