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Electrical activation and local vibrational mode from Si-implanted GaAs.

Authors :
Nakamura, T.
Katoda, T.
Source :
Journal of Applied Physics. 2/15/1985, Vol. 57 Issue 4, p1084. 5p.
Publication Year :
1985

Abstract

Deals with the use of Raman spectroscopy in studying local vibrational modes of lattice site silicon implanted in gallium arsenides. Information on the use of silicon ion implantation into semi-insulating gallium arsenide and subsequent thermal anneal for the fabrication of field-effect transistors and integrated circuits; Experiment; Results and discussion.

Details

Language :
English
ISSN :
00218979
Volume :
57
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7628656
Full Text :
https://doi.org/10.1063/1.334550