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Electrical activation and local vibrational mode from Si-implanted GaAs.
- Source :
-
Journal of Applied Physics . 2/15/1985, Vol. 57 Issue 4, p1084. 5p. - Publication Year :
- 1985
-
Abstract
- Deals with the use of Raman spectroscopy in studying local vibrational modes of lattice site silicon implanted in gallium arsenides. Information on the use of silicon ion implantation into semi-insulating gallium arsenide and subsequent thermal anneal for the fabrication of field-effect transistors and integrated circuits; Experiment; Results and discussion.
- Subjects :
- *RAMAN spectroscopy
*SILICON
*ION implantation
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 57
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7628656
- Full Text :
- https://doi.org/10.1063/1.334550