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Photoluminescence measurements of complex defects in Si-doped Al0.3Ga0.7As.

Authors :
de Paula, Ana M.
Medeiros-Ribeiro, G.
de Oliveira, A. G.
Source :
Journal of Applied Physics. 12/15/1994, Vol. 76 Issue 12, p8051. 4p. 1 Chart, 5 Graphs.
Publication Year :
1994

Abstract

Presents a study which measured the photoluminescence of complex defects in silicon-doped aluminum[sub0.3]gallium[sub0.7]arsenic. Optical properties of the compound; Results of photoluminescence spectra; Importance of the defects to the alloy optical properties.

Subjects

Subjects :
*PHOTOLUMINESCENCE
*ALUMINUM
*SILICON
*ARSENIC
*SPECTRUM analysis

Details

Language :
English
ISSN :
00218979
Volume :
76
Issue :
12
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7628419
Full Text :
https://doi.org/10.1063/1.357875
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