Modeling of a low-intensity electro-optical semiconductor switching device due to intrinsic photoconductivity.

Presents a study which theoretically analyzed an electro-optical device consisting of a stack of undoped alternating layers of narrow- and wide-gap materials together with a series resistor under constant voltage bias. Operation of the device; Information on the Franz-Keldysh effect; Impact of the Kirchhoff's law for the electrical circuit of the device on the voltage drop; Mechanism for an effective operation of the devices.