Transformation of a two-dimensional to one-dimensional energy profile on a spatially deformed Si0.82Ge0.18/Si0.51Ge0.49 wrinkled heterostructure.

A change in the dimensionality of an energy band in a semiconductor is done by reducing the dimension of its physical size. Here, we show that by spatially deforming a two-layer heterostructure into a wrinkled pattern, the minimum of the energy profile transforms from a two-dimensional plane at the hetero-interface into a one-dimensional path that lies along the wrinkled edge. This change alters the carrier path, causing the carriers to travel along a one-dimensional sinusoidal path, which may lead to an application. The present investigation shows that the dimensionality of the energy profile can be engineered by changing the morphology of the epilayers and provides insight into possible applications of the wrinkled pattern. [ABSTRACT FROM AUTHOR]