Back to Search
Start Over
High-frequency capacitive effects in resonant tunneling diodes.
- Source :
-
Journal of Applied Physics . 8/15/1993, Vol. 74 Issue 4, p2908. 6p. - Publication Year :
- 1993
-
Abstract
- Reports on the calculation of the time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects using the scattering matrix method. Band structure of a resonant tunneling diode under bias; Scattering matrix between regions with different modulation phases; Discussion on the capacitive effect in a RTD.
- Subjects :
- *DIODES
*QUANTUM tunneling
*S-matrix theory
*SCATTERING (Physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7627057
- Full Text :
- https://doi.org/10.1063/1.355292