Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C.

Authors :: Hasegawa, S.
Furuta, N.
Takeshita, T.
Inokuma, T.
Kurata, Y.
Source :: Journal of Applied Physics. 8/15/1992, Vol. 72 Issue 4, p1374. 4p. 4 Graphs.
Publication Year :: 1992
Abstract: Presents a study that investigated the effects of the incorporation of phosphorus and nitrogen impurities on the electrical and structural properties of polysilicon carbide thin films. Methodology; Examination of the resistivity and spin density of the samples; Analysis of the crystallinity of the samples.

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