GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing.

Presents a study that assessed the effect of shallow ion implantation and rapid thermal annealing on the interdiffusion of gallium and aluminum atoms at aluminum gallium arsenide (GaAs)/GaAs heterointerfaces in a variety of structures as a function of quantum well (QW) width. Background on QW structures; Analysis of the dependence of the photoluminescence energy shifts on QW width; Examination of the uniformity of the interdiffusion.