A comparison of the thermal redistribution of arsenic, ion implanted into titanium disilicide films formed on single and polycrystalline silicon.

Presents a study that investigated the diffusion behavior of arsenic implanted into silicides of titanium formed on single and polycrystalline silicon. Information on the application of titanium disilicide or TiSi [sub2] in current integrated circuit fabrication; Examination of the Rutherford backscattering results of the arsenic profiles obtained from TiSi[sub2]; Assessment of the transmission electron microscope diffraction patterns of the TiSi[sub2] layer on single-crystal silicon.