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π-bonded dimers, preferential pairing, and first-order desorption kinetics of hydrogen on Si(100)–(2×1).
- Source :
-
Journal of Chemical Physics . 1/1/1992, Vol. 96 Issue 1, p852. 4p. - Publication Year :
- 1992
-
Abstract
- Evidence is presented that π-bonding is present in the surface dimers on clean Si(100)–(2×1) and, as a consequence, that hydrogen atoms preferentially pair on surface dimer atoms even at low coverage. We propose a simple lattice gas model in order to calculate the equilibrium distribution of doubly- and singly-occupied dimers as a function of coverage and temperature, and show that even a very conservative estimate of the enthalpy difference between hydrogen on doubly- and singly-occupied dimers can explain the observed first-order desorption kinetics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HYDROGEN
*SILICON
*ADSORPTION (Chemistry)
*THERMAL desorption
Subjects
Details
- Language :
- English
- ISSN :
- 00219606
- Volume :
- 96
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Chemical Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7615165
- Full Text :
- https://doi.org/10.1063/1.462417