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π-bonded dimers, preferential pairing, and first-order desorption kinetics of hydrogen on Si(100)–(2×1).

Authors :
D’Evelyn, Mark P.
Yang, Yuemei L.
Sutcu, Leyla F.
Source :
Journal of Chemical Physics. 1/1/1992, Vol. 96 Issue 1, p852. 4p.
Publication Year :
1992

Abstract

Evidence is presented that π-bonding is present in the surface dimers on clean Si(100)–(2×1) and, as a consequence, that hydrogen atoms preferentially pair on surface dimer atoms even at low coverage. We propose a simple lattice gas model in order to calculate the equilibrium distribution of doubly- and singly-occupied dimers as a function of coverage and temperature, and show that even a very conservative estimate of the enthalpy difference between hydrogen on doubly- and singly-occupied dimers can explain the observed first-order desorption kinetics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00219606
Volume :
96
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Chemical Physics
Publication Type :
Academic Journal
Accession number :
7615165
Full Text :
https://doi.org/10.1063/1.462417