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Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers.
- Source :
-
Applied Physics Letters . 5/21/2012, Vol. 100 Issue 21, p212102-212102-4. 1p. 1 Chart, 4 Graphs. - Publication Year :
- 2012
-
Abstract
- We report the anomalous mobility properties of Si-delta-doped GaN with periodically doping profile. Samples with different delta-doping periods or with varied Si source flow were investigated. It is found that for the short delta-doping-period (<26.5 nm) samples, the Hall mobility increases with decreasing electron concentration; while for the longer-doping-period samples, the situation is just the opposite. To interpret this observation, a two-layer model has been built up for long-period samples based on secondary ion mass spectroscopy measurements. The fitting results using this model are well consistent with the experimental data. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DELTA rays
*SILICON
*SEMICONDUCTOR doping
*SECONDARY ion mass spectrometry
*GALLIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 76143285
- Full Text :
- https://doi.org/10.1063/1.4720395