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Erratum: 'Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures' [Appl. Phys. Lett. 100, 152116 (2012)].

Authors :
Pandey, S.
Cavalcoli, D.
Fraboni, B.
Cavallini, A.
Brazzini, T.
Calle, F.
Source :
Applied Physics Letters. 5/21/2012, Vol. 100 Issue 21, p219901-219901-1. 1p. 1 Graph.
Publication Year :
2012

Abstract

A correction to the article "Role of surface trap states on two-dimensional electron gas density in InAIN/AINGaN heterostructures" that was published in the 2012 issue is presented.

Subjects

Subjects :
*NUMERICAL calculations

Details

Language :
English
ISSN :
00036951
Volume :
100
Issue :
21
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
76143239
Full Text :
https://doi.org/10.1063/1.4720077