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Erratum: 'Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures' [Appl. Phys. Lett. 100, 152116 (2012)].
- Source :
-
Applied Physics Letters . 5/21/2012, Vol. 100 Issue 21, p219901-219901-1. 1p. 1 Graph. - Publication Year :
- 2012
-
Abstract
- A correction to the article "Role of surface trap states on two-dimensional electron gas density in InAIN/AINGaN heterostructures" that was published in the 2012 issue is presented.
- Subjects :
- *NUMERICAL calculations
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 76143239
- Full Text :
- https://doi.org/10.1063/1.4720077