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Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN.
- Source :
-
Chinese Physics Letters . Jan2012, Vol. 29 Issue 1, p1-4. 4p. - Publication Year :
- 2012
-
Abstract
- We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm) metal scheme, where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface. It is shown that unlike the conventional Ti/Al/Ti/Au contacts, the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10-4 Ω·cm2 even after annealing at 350°C. X-ray diffraction (XRD) measurements by synchrotron radiation and Auger electron spectroscopy (AES) examination are performed to understand the effects of heat treatment. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 29
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 73897493
- Full Text :
- https://doi.org/10.1088/0256-307X/29/1/017301