Cite
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
MLA
Redolfi, A., et al. “Bulk FinFET Fabrication with New Approaches for Oxide Topography Control Using Dry Removal Techniques.” Solid-State Electronics, vol. 71, May 2012, pp. 106–12. EBSCOhost, https://doi.org/10.1016/j.sse.2011.10.029.
APA
Redolfi, A., Kubicek, S., Rooyackers, R., Kim, M.-S., Sleeckx, E., Devriendt, K., Shamiryan, D., Vandeweyer, T., Delande, T., Horiguchi, N., Togo, M., Wouters, J. M. D., Jurczak, M., Hoffmann, T., Cockburn, A., Gravey, V., & Diehl, D. L. (2012). Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques. Solid-State Electronics, 71, 106–112. https://doi.org/10.1016/j.sse.2011.10.029
Chicago
Redolfi, A., S. Kubicek, R. Rooyackers, M.-S. Kim, E. Sleeckx, K. Devriendt, D. Shamiryan, et al. 2012. “Bulk FinFET Fabrication with New Approaches for Oxide Topography Control Using Dry Removal Techniques.” Solid-State Electronics 71 (May): 106–12. doi:10.1016/j.sse.2011.10.029.