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Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

Authors :
Kilchytska, V.
Md Arshad, M.K.
Makovejev, S.
Olsen, S.
Andrieu, F.
Poiroux, T.
Faynot, O.
Raskin, J.-P.
Flandre, D.
Source :
Solid-State Electronics. Apr2012, Vol. 70, p50-58. 9p.
Publication Year :
2012

Abstract

Abstract: In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150–220GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250°C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00381101
Volume :
70
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
73569863
Full Text :
https://doi.org/10.1016/j.sse.2011.11.020