Cite
Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.
MLA
Bazhenov, N. L., et al. “Radiative Recombination on the Interface in a P-GaInAsSb/p-InAs Type-II (Broken-Gap) Heterostructure upon Pulsed Excitation.” Semiconductors, vol. 31, no. 6, June 1997, p. 560. EBSCOhost, https://doi.org/10.1134/1.1187218.
APA
Bazhenov, N. L., Zegrya, G. G., Mikhaılova, M. P., Moiseev, K. D., Smirnov, , V. A., Solov, eva, O. Y., & Yakovlev, Y. P. (1997). Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation. Semiconductors, 31(6), 560. https://doi.org/10.1134/1.1187218
Chicago
Bazhenov, N. L., G. G. Zegrya, M. P. Mikhaılova, K. D. Moiseev, , V. A. Smirnov, eva, O. Yu. Solov, and Yu. P. Yakovlev. 1997. “Radiative Recombination on the Interface in a P-GaInAsSb/p-InAs Type-II (Broken-Gap) Heterostructure upon Pulsed Excitation.” Semiconductors 31 (6): 560. doi:10.1134/1.1187218.