Cite
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.
MLA
Davydov, V.Yu., et al. “Influence of Rapid High-Temperature Anneals on the Photoluminescence of Erbium-Doped GaN in the Wavelength Interval 1.0-1.6 Μm.” Semiconductors, vol. 33, no. 1, Jan. 1999, p. 1. EBSCOhost, https://doi.org/10.1134/1.1187636.
APA
Davydov, V. Y., Lundin, V. V., Smirnov, A. N., Sobolev, N. A., Usikov, A. S., Emel, yanov, A. M., Makoviıchuk, M. I., & Parshin, E. O. (1999). Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm. Semiconductors, 33(1), 1. https://doi.org/10.1134/1.1187636
Chicago
Davydov, V. Yu., V. V. Lundin, A. N. Smirnov, N. A. Sobolev, A. S. Usikov, yanov, A. M. Emel, M. I. Makoviıchuk, and E. O. Parshin. 1999. “Influence of Rapid High-Temperature Anneals on the Photoluminescence of Erbium-Doped GaN in the Wavelength Interval 1.0-1.6 Μm.” Semiconductors 33 (1): 1. doi:10.1134/1.1187636.