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Recombination in hydrogenated amorphous silicon.
- Source :
-
Semiconductors . Aug98, Vol. 32 Issue 8, p824. 7p. - Publication Year :
- 1998
-
Abstract
- Investigations of transient photoconductivity in a-Si : H lead to the conclusion that tunnel recombination of localized excess carriers may predominate in the temperature range from liquidhelium temperatures up to temperatures at which the material was synthesized. [ABSTRACT FROM AUTHOR]
- Subjects :
- *AMORPHOUS semiconductors
*HYDROGENATION
Subjects
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 32
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 7317821
- Full Text :
- https://doi.org/10.1134/1.1187467