Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film

Abstract: A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/…/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. [Copyright &y& Elsevier]