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Growth of Ge1−xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates
- Source :
-
Thin Solid Films . Feb2012, Vol. 520 Issue 8, p3201-3205. 5p. - Publication Year :
- 2012
-
Abstract
- Abstract: We investigated the crystalline structures of Ge1−xSnx heteroepitaxial layers with Sn contents greater than 20% grown on InP and Ge substrates. Considering the lattice mismatch between the Ge1−xSnx layers and the substrates, we achieved epitaxial growth of Ge1−xSnx layers with very high Sn content by suppressing the Sn precipitation; in addition, we improved upon the crystalline quality of Ge1−xSnx heteroepitaxial layers. As a result, we could successfully form a 130nm-thick Ge1−xSnx heteroepitaxial layer on an InP substrate with a Sn content as high as 27% without Sn precipitation. We also improved the crystalline quality of Ge1−xSnx layers by annealing at a temperature as low as 290°C. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 520
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 72694997
- Full Text :
- https://doi.org/10.1016/j.tsf.2011.10.153