Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material.

Realization of an abrupt HfO2/Si interface without unintentional oxidation of the silicon substrate is a crucial task for the development of modern field-effect transistors. Here, we present a theoretical model which suggests that deposition of a dopant material on the HfO2 layer turns it into an oxygen absorber, suppressing the formation of SiOx at the interface. Tantalum is predicted as an effective dopant in HfO2 for this purpose. [ABSTRACT FROM AUTHOR]