Microwave dielectric ceramic with intrinsic low firing temperature: BaLa2(MoO4)4

Abstract: A low firing microwave dielectric ceramic BaLa2(MoO4)4 with monoclinic structure was prepared via a solid state reaction method. The BaMoO4 and La2(MoO4)3 phases were first formed at 600°C and then the monoclinic BaLa2(MoO4)4 phase was formed gradually above 700°C. Dense and homogeneous microstructure can be obtained in ceramic sample sintered at 800–860°C for 2h with grain size lying between 3–7μm. Optimal microwave dielectric properties can be obtained in ceramic sintered at 860°C for 2h with a permittivity of ~10.3, a Qf value of ~29,800GHz and a temperature coefficient of resonant frequency of ~−76ppm/°C at about 9.9GHz. [Copyright &y& Elsevier]