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Thermionic emission in silicon at temperatures below 30 K.
- Source :
-
Applied Physics Letters . 1984, Vol. 45 Issue 7, p752-754. 3p. - Publication Year :
- 1984
-
Abstract
- Experimental results on the injection of carriers into the i region of silicon p-i-n diodes at temperatures below 30 K are described and a simple model is presented to explain the observed I-V characteristics. A range of temperatures is identified in which it is argued that thermionic emission into the i region can be observed unmasked by other effects. The model generalizes the Richardson-Dushman equation to include the effect of impurity bands and a finite transition region between heavily doped and lightly doped regions. As an application, a fast nondestructive means of determining the abruptness of doping profiles is suggested. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 45
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71381399
- Full Text :
- https://doi.org/10.1063/1.95386