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Fabrication of 20-nm structures in GaAs.
Fabrication of 20-nm structures in GaAs.
- Source :
-
Applied Physics Letters . 1984, Vol. 45 Issue 4, p410-412. 3p. - Publication Year :
- 1984
-
Abstract
- Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl4 plasma [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON beams
*LITHOGRAPHY
*PRINTING
*ELECTRONICS
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 45
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71381077
- Full Text :
- https://doi.org/10.1063/1.95239