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Fabrication of 20-nm structures in GaAs.

Fabrication of 20-nm structures in GaAs.

Authors :
Stern, M. B.
Craighead, H. G.
Liao, P. F.
Mankiewich, P. M.
Source :
Applied Physics Letters. 1984, Vol. 45 Issue 4, p410-412. 3p.
Publication Year :
1984

Abstract

Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl4 plasma [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
45
Issue :
4
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
71381077
Full Text :
https://doi.org/10.1063/1.95239