The effect of an applied electric field on the oxidation of aluminum in the temperature range 50-400°C.

This paper describes some oxidation studies of evaporated aluminum films. Resistance marker measurements were carried out between 230 and 400° C and it was concluded that the oxide grows by metal transport. From the sign of its Seebeck coefficient, the oxide was deduced to be n-type. The effect of applying an electric field across the growing oxide layer on aluminum was also investigated. A porous platinum layer evaporated onto the oxide surface was used as one electrode, the underlying metal being the other electrode. At all temperatures between 50 and 400° C the same field effect was observed. When the oxygen-oxide interface was biased negative with respect to the aluminum, an enhancement of the oxidation rate was achieved. These results have been interpreted in terms of the Mott-Cabrera theory. [ABSTRACT FROM AUTHOR]