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Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Nuclear Science . 12/1/2011 Part 1 Part 1, Vol. 58 Issue 6, p2734-2738. 5p. - Publication Year :
- 2011
-
Abstract
- It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 58
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 70577700
- Full Text :
- https://doi.org/10.1109/TNS.2011.2171504