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A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network.

Authors :
Yoon, Youngchang
Kim, Jihwan
Kim, Hyungwook
An, Kyu Hwan
Lee, Ockgoo
Lee, Chang-Ho
Kenney, James Stevenson
Source :
IEEE Transactions on Microwave Theory & Techniques. Jan2012, Vol. 60 Issue 1, p77-88. 12p.
Publication Year :
2012

Abstract

A dual-mode CMOS power amplifier (PA) with an integrated tunable matching network is presented. A switched capacitor is fully analyzed to implement a tunable matching network in terms of power-handling capability, tuning ratio, quality factor, and linearity. Based on the presented consideration, a 3.3-V 2.4-GHz fully integrated CMOS dual-mode PA is implemented in a 0.18-\mum CMOS process. The PA has two power modes, high-power and low-power (LP), and each mode is optimally matched by the tunable matching network. The LP mode enables more than 50% dc current reduction from 0- to 10-dBm power range. The improved efficiency in this study is approximately twice that of other multimode CMOS PAs reported thus far. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189480
Volume :
60
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Microwave Theory & Techniques
Publication Type :
Academic Journal
Accession number :
70577303
Full Text :
https://doi.org/10.1109/TMTT.2011.2175235