Back to Search
Start Over
Growth orientation dependent photoluminescence of GaAsN alloys.
- Source :
-
Applied Physics Letters . 1/16/2012, Vol. 100 Issue 3, p032108. 4p. 1 Diagram, 1 Chart, 3 Graphs. - Publication Year :
- 2012
-
Abstract
- We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 100
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 70566050
- Full Text :
- https://doi.org/10.1063/1.3679079