Cite
Optics, morphology, and growth kinetics of GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy.
MLA
Moret, N., et al. “Optics, Morphology, and Growth Kinetics of GaAs/AlxGa1-XAs Quantum Wells Grown on Vicinal Substrates by Metalorganic Vapor Phase Epitaxy.” Physical Review B: Condensed Matter & Materials Physics, vol. 84, no. 15, Oct. 2011, pp. 155311-1-155311–10. EBSCOhost, https://doi.org/10.1103/PhysRevB.84.155311.
APA
Moret, N., Oberli, D. Y., Pelucchi, E., Gogneau, N., Rudra, A., & Kapon, E. (2011). Optics, morphology, and growth kinetics of GaAs/AlxGa1-xAs quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy. Physical Review B: Condensed Matter & Materials Physics, 84(15), 155311-1-155311–10. https://doi.org/10.1103/PhysRevB.84.155311
Chicago
Moret, N., D. Y. Oberli, E. Pelucchi, N. Gogneau, A. Rudra, and E. Kapon. 2011. “Optics, Morphology, and Growth Kinetics of GaAs/AlxGa1-XAs Quantum Wells Grown on Vicinal Substrates by Metalorganic Vapor Phase Epitaxy.” Physical Review B: Condensed Matter & Materials Physics 84 (15): 155311-1-155311–10. doi:10.1103/PhysRevB.84.155311.