Cite
A 0.18-μm SiGe BiCMOS HBT VCO using diode degeneration.
MLA
Jang, Sheng-Lyang, et al. “A 0.18-Μm SiGe BiCMOS HBT VCO Using Diode Degeneration.” Microwave & Optical Technology Letters, vol. 54, no. 3, Mar. 2012, pp. 605–08. EBSCOhost, https://doi.org/10.1002/mop.26619.
APA
Jang, S.-L., Hsieh, C.-W., Chang, C.-W., & Hsue, C.-W. (2012). A 0.18-μm SiGe BiCMOS HBT VCO using diode degeneration. Microwave & Optical Technology Letters, 54(3), 605–608. https://doi.org/10.1002/mop.26619
Chicago
Jang, Sheng-Lyang, Chao-Wei Hsieh, Chia-Wei Chang, and Ching-Wen Hsue. 2012. “A 0.18-Μm SiGe BiCMOS HBT VCO Using Diode Degeneration.” Microwave & Optical Technology Letters 54 (3): 605–8. doi:10.1002/mop.26619.