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Thermal annealing of InAs quantum dots on patterned GaAs substrates.

Authors :
Helfrich, M.
Hendrickson, J.
Rülke, D.
Kalt, H.
Hetterich, M.
Khitrova, G.
Gibbs, H.
Linden, S.
Wegener, M.
Hu, D. Z.
Schaadt, D. M.
Source :
AIP Conference Proceedings. 12/22/2011, Vol. 1399 Issue 1, p217-218. 2p.
Publication Year :
2011

Abstract

We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*ANNEALING of semiconductors
*GALLIUM arsenide semiconductors
*INDIUM arsenide
*QUANTUM dots
*THERMAL analysis
*SUBSTRATES (Materials science)

Details

Language :
English
ISSN :
0094243X
Volume :
1399
Issue :
1
Database :
Academic Search Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
70099766
Full Text :
https://doi.org/10.1063/1.3666332
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