Near-infrared luminescence of OH− and Cl− doped Bi4Ge3O12 crystals

Abstract: OH− and Cl− doped Bi4Ge3O12 (BGO) single crystals had been grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, the transmittance and emission spectra in near infrared region (NIR) were measured at room temperature. 5% OH− doped BGO shows a significant emission band peaking around 1181nm under 808nm laser diodes (LDs) excitation, and the 5% Cl− doped BGO exhibits a relatively weak emission band as well. 100% and 5% OH− doped BGO show noticeable emission band centered at about 1346nm under 980nm LDs excitation. [Copyright &y& Elsevier]