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High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs
- Source :
-
Microelectronics Reliability . Jan2012, Vol. 52 Issue 1, p118-123. 6p. - Publication Year :
- 2012
-
Abstract
- Abstract: A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 52
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 69999086
- Full Text :
- https://doi.org/10.1016/j.microrel.2011.08.001