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Dopant Profile and Gate Geometric Effects on Polysilicon Gate Depletion in Scaled MOS.
- Source :
-
IEEE Transactions on Electron Devices . Jul2002, Vol. 49 Issue 7, p1227. 5p. 7 Diagrams, 9 Graphs. - Publication Year :
- 2002
-
Abstract
- Discusses the impact of gate geometry and dopant distributions on polydepletion effects based on two- and three-dimensional device simulations. Dopant profile effects on polydepletion; Gate geometric effects on polydepletion; Polydepletion effect for small-geometry devices.
- Subjects :
- *GEOMETRY
*SIMULATION methods & models
*SEMICONDUCTOR doping
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 6964109
- Full Text :
- https://doi.org/10.1109/TED.2002.1013280