Comparison of morphology of CdTe/CdMnTe interfaces in heterostructures grown by molecular beam epitaxy in a standard and atomic layer modes.

Photoluminescence studies of CdTe/CdMnTe heterostructures grown either by the atomic layer epitaxy or by a standard molecular beam epitaxy are presented. Morphology of CdTe/CdMnTe interfaces is compared for heterostructures grown by these two methods. The inter-island exciton migration, reported until recently only for high quality GaAs/A1GaAs structures, is observed in our structures with the quantum well grown by the atomic layer epitaxy. This indicates that relatively large and flat quantum well islands with a width differing by one monolayer exist in these samples. The present study, thus, demonstrates an improved quality of interfaces in structures grown by the atomic layer epitaxy. [ABSTRACT FROM AUTHOR]