NANOCRYSTALLINE TIN OXIDE THIN FILM AS A LOW LEVEL H2S GAS SENSOR.

Tin oxide thin films were deposited on alumina substrates at 350°C by spray pyrolysis technique. The films were studied after annealing them in air at different temperatures 550°C, 750°C and 950°C for 30 min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption spectroscopy technique. The grain size was observed to be increased, ranging from 40 to 56.1 nm, with the increase in annealing temperature. Absorbance spectra were taken to examine the optical properties. The band gap energy was observed to be decreased with the increase in annealing temperature. These films were tested to various gases at different operating temperature ranging from 50°C to 450°C. The Tin Oxide film showed maximum sensitivity to H2S gas. The H2S sensing property of the SnO2 films was investigated with different annealing temperatures of the films and at different concentrations of H2S gas. It was found that the annealing temperature of the film significantly affects the sensitivity of the SnO2 to the H2S gas. The maximum sensitivity was found in case of the film annealed at temperature 950°C at the operating temperature 100°C. The sensitivity was found to be increased by 24% in case of the film annealed at 950°C as compared to the sensitivity of the film annealed at 550°C. The observed response of the film was for gas concentration of 10 ppm for H2S with reasonable sensitivity. The quick response and fast recovery are the main features of this film. The effect of annealing temperature on the structural, microstructural, optical and gas sensing properties of the nanocrystalline tin oxide thin films were studied and discussed. [ABSTRACT FROM AUTHOR]