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Dynamic study on microstructural evolution of nickel germanide utilizing zirconium interlayer

Authors :
Lee, Jae-Wook
Bae, Jee-Hwan
Hwang, Ji-Hye
Kim, Hyung-Kyu
Park, Min-Ho
Kim, Hyoungsub
Yang, Cheol-Woong
Source :
Microelectronic Engineering. Jan2012, Vol. 89, p23-26. 4p.
Publication Year :
2012

Abstract

Abstract: We examined the formation and morphological evolution of germanide formed in a ternary Ni/Zr-interlayer/Ge system using ex situ and in situ annealing experiments. Ni germanide in the Ni/Zr-interlayer/Ge system remained stable at temperatures up to 550°C whereas Ni germanide in a Ni/Ge system agglomerated and was unstable. Microstructural and chemical analyses of the Ni/Zr-interlayer/Ge system during and after in situ annealing in a transmission electron microscope confirmed that the Zr atoms were retained uniformly on the top region of the Ni germanide layer during the diffusion reaction. Ultimately, the level of agglomeration in the Ni germanide film was reduced by the Zr-interlayer, and the thermal stability of Ni germanide was improved. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01679317
Volume :
89
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
67382085
Full Text :
https://doi.org/10.1016/j.mee.2011.03.010