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Vacancy-induced bound states in topological insulators.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Jul2011, Vol. 84 Issue 3, p35307.1-35307.6. 6p. - Publication Year :
- 2011
-
Abstract
- We present an exact solution of a modified Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies can induce bound states in the band gap of topological insulators. They arise due to the Z2 classification of time-reversal invariant insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 84
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 67140358
- Full Text :
- https://doi.org/10.1103/PhysRevB.84.035307