Rectifying and photovoltage characteristics of BiSrCoO/Nb-doped SrTiO heterojunction.

A heterojunction was fabricated by growing a layer of BiSrCoO thin film on the 0.7 wt% Nb-doped SrTiO substrate. Such heterojunction showed good rectifying characteristics over a wide temperature range, and its transport mechanism under the forward bias can be attributed to a space charge limited conduction mechanism via defects near the interface of the heterojunction. Photovoltaic properties of the heterojunction were studied by using both continuous-wave and pulsed irradiations and the results can be well explained by the photovoltaic effect of a p-n junction. [ABSTRACT FROM AUTHOR]